• DocumentCode
    2615925
  • Title

    A simple method to split base-collector capacitance of bipolar junction transistors

  • Author

    Lee, Seonghearn

  • Author_Institution
    Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki-Do, South Korea
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    144
  • Lastpage
    145
  • Abstract
    In this paper, we propose a new simple method ac current crowding to determine Cμ (splitting intrinsic capacitance) and Cμx (extrinsic base-collector capacitance) parameters, S-parameter measurements on standard Si BJTs by extraction methods.
  • Keywords
    S-parameters; bipolar transistors; capacitance; elemental semiconductors; semiconductor device models; silicon; S-parameter measurements; Si; Si BJTs; ac current crowding; bipolar junction transistors; extraction methods; extrinsic base-collector capacitance; split base-collector capacitance; splitting intrinsic capacitance; Capacitance measurement; Current measurement; Data mining; Gain measurement; Germanium silicon alloys; Impedance; Power measurement; Proximity effect; Scattering parameters; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272034
  • Filename
    1272034
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615925