DocumentCode :
2615925
Title :
A simple method to split base-collector capacitance of bipolar junction transistors
Author :
Lee, Seonghearn
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki-Do, South Korea
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
144
Lastpage :
145
Abstract :
In this paper, we propose a new simple method ac current crowding to determine Cμ (splitting intrinsic capacitance) and Cμx (extrinsic base-collector capacitance) parameters, S-parameter measurements on standard Si BJTs by extraction methods.
Keywords :
S-parameters; bipolar transistors; capacitance; elemental semiconductors; semiconductor device models; silicon; S-parameter measurements; Si; Si BJTs; ac current crowding; bipolar junction transistors; extraction methods; extrinsic base-collector capacitance; split base-collector capacitance; splitting intrinsic capacitance; Capacitance measurement; Current measurement; Data mining; Gain measurement; Germanium silicon alloys; Impedance; Power measurement; Proximity effect; Scattering parameters; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272034
Filename :
1272034
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2615925
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