An analytical retention model for SONOS nonvolatile memory devices in the excess electron state

Author

Wang, Yu ; White, Marvin H.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

156

Lastpage

157

Abstract

For the first time, we present a SONOS retention model that incorporates both T-B and TE detrapping mechanisms. First, the influences of gate dielectric thickness, temperature and trap energy on the electron decay are discussed, based on calculations of detrapping time constants. Next, an analytical SONOS retention model is presented, considering an arbitary trap energy distribution in the silicon nitride. Finally, the model is verified with a good agreement between measured and simulated SONOS retention characteristics at temperatures from 22°C to 225°C.

Keywords

dielectric materials; electron traps; field effect memory circuits; semiconductor device models; semiconductor-insulator-semiconductor devices; silicon compounds; 22 to 225 degC; SONOS nonvolatile memory devices; SiN; analytical SONOS retention model; analytical retention model; detrapping mechanisms; detrapping time constants; electron decay; electron state; gate dielectric thickness; silicon nitride; trap energy distribution; Analytical models; Dielectric measurements; Electron traps; Nonvolatile memory; Photonic band gap; SONOS devices; Tellurium; Temperature; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272040

Filename

1272040