Title :
The effect of channel dimensions on the millimeter-wave power performance of a pseudomorphic HEMT
Author :
Huang, J.C. ; Boulais, W. ; Platzker, A. ; Kazior, T. ; Aucoin, L. ; Shanfield, S. ; Bertrand, A. ; Vafiades, M. ; Niedzwiecki, M.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
The authors study the effect of channel dimensions on the millimeter-wave power performance of a double-recessed pseudomorphic high electron mobility transistor (PHEMT). The choice of channel recess dimension, specifically the gate to drain n+ ledge separation (Lgd), seemed to have the most pronounced effect on transistor´s power performance. Gate-drain capacitance, output conductance, drain delay (unity current gain frequency) and reverse breakdown voltage were all strong functions of Lgd. With this parameter optimized, a PHEMT exhibited the best power performance yet reported at Ka-band and state-of-the-art performance at Q-band. A Q-band MMIC power amplifier using an existing design was also realized. The two-stage amplifier exhibited 500 mW of ouput power with 7 dB gain and 15% PAE at 40 GHz. This result is the best published performance for a MMIC at this frequency.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; millimetre wave amplifiers; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power amplifiers; power field effect transistors; power integrated circuits; 15 percent; 40 GHz; 500 mW; 7 dB; GaAs based devices; III-V semiconductors; Ka-band; MIMIC; MMIC power amplifier; Q-band; channel recess dimension; double-recessed; drain delay; effect of channel dimensions; gate to drain n+ ledge separation; gate-drain capacitance; millimeter-wave power performance; output conductance; pseudomorphic HEMT; reverse breakdown voltage; two-stage amplifier; Capacitance; Delay; Electron mobility; Frequency; HEMTs; MMICs; MODFETs; Millimeter wave transistors; PHEMTs; Power amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394475
