DocumentCode
2616075
Title
Manufacturing technology development for high yield pseudomorphic HEMT
Author
Bar, S.X. ; Wu, C.S. ; Ming Hu ; Kanber, H. ; Pao, C. ; Yau, W.
Author_Institution
Hughes Microelectron. Div., Torrance, CA, USA
fYear
1993
fDate
10-13 Oct. 1993
Firstpage
173
Lastpage
175
Abstract
The authors present an approach to establishing PHEMT manufacturing technology. They discuss the impact of development work in four key process areas. They also demonstrate good wafer uniformity and wafer to wafer reproducibility for PHEMT X-band multifunction LNAs.<>
Keywords
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; high electron mobility transistors; integrated circuit yield; millimetre wave amplifiers; millimetre wave field effect transistors; ohmic contacts; passivation; semiconductor technology; 0.25 micron; GaAs based devices; III-V semiconductors; MIMIC; X-band; etching reproducibility; high yield; manufacturing technology development; multifunction LNAs; nitride passivation; ohmic contacts; pseudomorphic HEMT; wafer to wafer reproducibility; wafer uniformity; Calibration; Conductivity; Gallium arsenide; Manufacturing processes; Ohmic contacts; PHEMTs; Passivation; Plasma properties; Reproducibility of results; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1393-3
Type
conf
DOI
10.1109/GAAS.1993.394476
Filename
394476
Link To Document