Title :
Manufacturing technology development for high yield pseudomorphic HEMT
Author :
Bar, S.X. ; Wu, C.S. ; Ming Hu ; Kanber, H. ; Pao, C. ; Yau, W.
Author_Institution :
Hughes Microelectron. Div., Torrance, CA, USA
Abstract :
The authors present an approach to establishing PHEMT manufacturing technology. They discuss the impact of development work in four key process areas. They also demonstrate good wafer uniformity and wafer to wafer reproducibility for PHEMT X-band multifunction LNAs.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; high electron mobility transistors; integrated circuit yield; millimetre wave amplifiers; millimetre wave field effect transistors; ohmic contacts; passivation; semiconductor technology; 0.25 micron; GaAs based devices; III-V semiconductors; MIMIC; X-band; etching reproducibility; high yield; manufacturing technology development; multifunction LNAs; nitride passivation; ohmic contacts; pseudomorphic HEMT; wafer to wafer reproducibility; wafer uniformity; Calibration; Conductivity; Gallium arsenide; Manufacturing processes; Ohmic contacts; PHEMTs; Passivation; Plasma properties; Reproducibility of results; Silicon;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394476
