Title :
Recent progress in δ-doped compound semiconductors
Author :
Li, G. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We report recent progress in growth of δ-doped compound semiconductors by metal organic vapour phase epitaxy (MOVPE). The limiting processes are discussed based on parametric studies of δ-doping. Growth parameters capable of effectively controlling the δ-doping concentration are revealed in the use of SiH4, DMZn or TMAl as the doping precursor. The experimental results show that high quality δ-doped layers in III-Vs can be grown in MOVPE for device applications
Keywords :
III-V semiconductors; aluminium compounds; carrier density; doping profiles; gallium arsenide; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; δ-doping concentration control; AlGaAs:C; AlGaAs:Si; AlGaAs:Zn; III-V semiconductors; MOVPE; SIMS profiles; carrier profiles; compound semiconductors; device applications; dimethylzinc; doping precursor; metal organic vapour phase epitaxy; parametric studies; trimethylaluminium; Atomic layer deposition; Chemical processes; Electrons; Epitaxial growth; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Semiconductor device doping; Temperature distribution; Zinc;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610088
