• DocumentCode
    2616134
  • Title

    Optimization of the cutoff frequency for Si1-xGex HBTs

  • Author

    Ai, Lei ; Cheng, Ming C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    172
  • Lastpage
    173
  • Abstract
    In this paper, we derive an analytical expression for the total delay time τtot in Si1-xGexHBTs and based on the expression, the influences of the Ge composition profile XGe(y) in the base on total delay time τtot is examined for optimization of cutoff frequency fT. Total delay times are varied by varying doping profiles and Ge composition. Trapezoid-like base Ge composition profile and total delay time for the Si1-xGex HBT were studied.
  • Keywords
    Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SiGe; cutoff frequency; doping profiles; heterojunction bipolar transistor; optimization; total delay time; trapezoid like base Ge composition profile; Capacitance; Cutoff frequency; Delay effects; Displays; Doping profiles; Equations; Heterojunction bipolar transistors; Predictive models; Shape; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272047
  • Filename
    1272047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2616134