Title :
A simple short-channel MOSFET model and its application to delay analysis of inverters and series-connected MOSFETs
Author :
Sakurai, Takayasu ; Newton, A. Richard
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A simple short-channel MOSFET model is proposed and applied to the delay analysis of CMOS inverters and series-connected MOSFET structures (SCMSs). The model is implemented in SPICE3 and shown to enhance the simulation speed. The model parameters for this model can be easily obtained. A delay analysis of the SCMS is carried out in the submicron region, and it is shown that the delay ratio ((delay of NAND/NOR)/(delay of inverter)) becomes smaller as channel length gets shorter. For example, if the maximum number of series-connected MOSFETS is considered to be five in 2-μm designs, then the number can be increased to 6~7 in the submicron circuit design. In the typical cases in VLSI designs, the delay ratio for N-SCMSs is much less than N2
Keywords :
CMOS integrated circuits; MOS integrated circuits; delays; insulated gate field effect transistors; integrated logic circuits; logic gates; semiconductor device models; 2 micron; CMOS inverters; SPICE3; VLSI designs; delay analysis; model parameters; series-connected MOSFETs; short-channel MOSFET model; simulation speed enhancement; submicron region; Application software; Circuit synthesis; Computer science; Delay effects; Differential equations; Inverters; MOSFET circuits; Semiconductor device modeling; Very large scale integration; Voltage;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.111928
