A one-dimensional MOSFET model for simulation of hot-carrier induced device and circuit degradation

An accurate one-dimensional device model for the simulation of nMOS transistors with hot-carrier-induced oxide damage is presented. The model uses a realistic charge density distribution profile to account for the localization of the oxide-interface charge near the drain. Model simulation results obtained for nMOS transistors with hot-carrier-induced oxide damage demonstrate good agreement with the experimental data. The amount and the location of the hot-carrier-induced oxide damage are introduced into the model by changing only a few parameters, which simplifies the implementation of the model in a reliability simulation environment. The model was implemented in the iSMILE circuit simulator, and the capabilities of the model were explored by various circuit simulation examples. Results of this simulation are given