• DocumentCode
    2616226
  • Title

    Asymmetrically recessed (ASR) 0.13μm In0.65GaAs HEMT´s using double-deck shaped (DDS) gate technology

  • Author

    Kim, Dae-Hvun ; Yeon, Seong-Jin ; Lee, Jae.-Hak. ; Seo, Kwang-Seok

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    184
  • Lastpage
    185
  • Abstract
    In this paper, we fabricated a 0.13 μm ASR gate In0.65GaAs P-HEMT by inserting additional dummy gate line and using DDS gate structure. The fabricated device showed excellent DC and RF characteristics with a improvement in output conductance (Gds) and maximum oscillation frequency (fmax). These results demonstrate that an ASR gate structure for high performance 100 nm scale InP P-HEMT.
  • Keywords
    III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; 0.13 micron; 100 nm; In0.65GaAs HEMT; InGaAs; InP; InP P-HEMT; RF characteristics; asymmetrically recessed gate; double-deck shaped gate technology; dummy gate line; electrical conductance; oscillation frequency; Automatic speech recognition; Degradation; Etching; Gallium arsenide; HEMTs; Impact ionization; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272052
  • Filename
    1272052
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2616226