DocumentCode :
2616226
Title :
Asymmetrically recessed (ASR) 0.13μm In0.65GaAs HEMT´s using double-deck shaped (DDS) gate technology
Author :
Kim, Dae-Hvun ; Yeon, Seong-Jin ; Lee, Jae.-Hak. ; Seo, Kwang-Seok
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
184
Lastpage :
185
Abstract :
In this paper, we fabricated a 0.13 μm ASR gate In0.65GaAs P-HEMT by inserting additional dummy gate line and using DDS gate structure. The fabricated device showed excellent DC and RF characteristics with a improvement in output conductance (Gds) and maximum oscillation frequency (fmax). These results demonstrate that an ASR gate structure for high performance 100 nm scale InP P-HEMT.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; 0.13 micron; 100 nm; In0.65GaAs HEMT; InGaAs; InP; InP P-HEMT; RF characteristics; asymmetrically recessed gate; double-deck shaped gate technology; dummy gate line; electrical conductance; oscillation frequency; Automatic speech recognition; Degradation; Etching; Gallium arsenide; HEMTs; Impact ionization; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272052
Filename :
1272052
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2616226
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