• DocumentCode
    2616239
  • Title

    Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs

  • Author

    Webster, Richard T. ; Anwar, A.F.M.

  • Author_Institution
    Air Force Res. Lab., Hanscom AFB, MA, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    186
  • Lastpage
    187
  • Abstract
    In this paper, we presents the first measurement of minimum noise figure in AlGaAsSb/InGaAs/AlGaAsSb metamorphic quantum well HEMTs (MHEMTs). MHEMTs allow the development of InGaAs-based HEMTs on inexpensive GaAs substrates in contrast to the rather expensive InP-substrates. A measured low noise figure, Fmin is a function of frequency at different gate biases. This provides an attractive alternative technology for the realization of low noise millimeter wave devices.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; noise measurement; quantum well devices; semiconductor device measurement; semiconductor device noise; AlGaAsSb-InGaAs-AlGaAsSb; AlGaAsSb/InGaAs/AlGaAsSb metamorphic quantum well HEMTs; GaAs substrates; InP-substrate; gate bias; low noise millimeter wave devices; metamorphic high electron mobility transistor; noise figure; Frequency measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Millimeter wave measurements; Millimeter wave technology; Noise figure; Noise measurement; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272053
  • Filename
    1272053
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2616239