• DocumentCode
    2616300
  • Title

    A manufacturable complementary GaAs process

  • Author

    Abrokwah, J.K. ; Huang, J.H. ; Ooms, W. ; Shurboff, C. ; Hallmark, J.A. ; Lucero, R. ; Gilbert, J. ; Bernhards, B. ; Hansell, G.

  • Author_Institution
    Motorola Inc., Tempe, AZ, USA
  • fYear
    1993
  • fDate
    10-13 Oct. 1993
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    A self-aligned complementary GaAs heterostructure FET process has been established for low power, high-speed digital circuits. The devices are fabricated on four-inch MBE epitaxial wafers consisting of AlGaAs/InGaAs epilayers grown on LEC GaAs substrates. The process uses twelve lithographic steps including two levels of interconnect metal. Typical transconductances of 250 mS/mm and 60 mS/mm are achieved on 1/spl times/10 /spl mu/m N-channel and P-channel devices, respectively. Twenty-three stage unloaded complementary ring oscillators consisting of 1/spl times/10 /spl mu/m N- and P-FETs show propagation delay of 190 ps and speed-power product of 7.5 fJ or 0.35 /spl mu/W/MHz.<>
  • Keywords
    III-V semiconductors; field effect digital integrated circuits; gallium arsenide; integrated circuit interconnections; integrated circuit yield; very high speed integrated circuits; 190 ps; 250 mS/mm; 60 mS/mm; Al interconnect; AlGaAs-InGaAs epilayers; CS-7 facility; GaAs; GaAs substrates; III-V semiconductor; MBE epitaxial wafers; complementary HIGFET; heterostructure FET process; high yield; high-speed digital circuits; low power; manufacturable complementary process; multilevel VLSI interconnect; propagation delay; self-aligned; unloaded complementary ring oscillators; Digital circuits; FETs; Gallium arsenide; Indium gallium arsenide; Integrated circuit interconnections; Manufacturing processes; Molecular beam epitaxial growth; Propagation delay; Ring oscillators; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    0-7803-1393-3
  • Type

    conf

  • DOI
    10.1109/GAAS.1993.394486
  • Filename
    394486