Simulation of Be diffusion in InGaAs epitaxial layers in the case of point defect nonequilibrium

Author

Gautier, S. ; Koumetz, S. ; Marcon, J. ; Ketata, K. ; Ketata, M. ; Launay, P.

Author_Institution

LCIA, Inst. Nat. des Sci. Appliques, Rouen, France

fYear

1996

fDate

8-11 Dec 1996

Firstpage

130

Lastpage

133

Abstract

Beryllium diffusion during post-growth annealing has been investigated in InGaAs epitaxial layers. Under point defect nonequilibrium conditions, a Kick-out Diffusion model considering neutral Be interstitial species and charged point defects has been studied. Then, a General Substitutional-Interstitial Diffusion model based on simultaneous diffusion by Dissociative and Kick-out mechanisms is proposed. Simulated curves are compared with experimental profiles and good agreement is obtained

Keywords

III-V semiconductors; beryllium; diffusion; gallium arsenide; impurity-defect interactions; indium compounds; interstitials; rapid thermal annealing; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor process modelling; Be diffusion simulation; InGaAs epitaxial layers; InGaAs:Be; RTA; SIMS diffusion profiles; charged point defects; dissociative diffusion mechanism; general substitutional-interstitial diffusion model; kick-out diffusion model; neutral Be interstitial species; point defect nonequilibrium; post-growth annealing; Computer aided software engineering; Degradation; Doping; Epitaxial layers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Rapid thermal annealing; Semiconductor process modeling; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610089

Filename

610089