Title :
Crossover from diffusive to ballistic transport as a function of frequency in a two dimensional electron gas
Author :
Kang, Sungmu ; Burke, Peter John ; Pfeiffer, L.N. ; West, K.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA
Abstract :
Ballistic transport is nothing but an electron transport in the limit (ωτm > 1); the electron move without scattering between electric field cycles. Diffusive transport can be defined as the lower frequency range (ωτm<1); in the diffusive limit there are many scattering events between electric field cycles. Here we measure for the first time the crossover from diffusive to ballistic transport as a function of frequency in a dc contacted 2DEG.
Keywords :
III-V semiconductors; aluminium compounds; ballistic transport; gallium arsenide; semiconductor quantum wells; two-dimensional electron gas; 2DEG; GaAs-AlGaAs; ballistic transport; diffusive transport; electron transport; two dimensional electron gas; Ballistic transport; Contact resistance; Electrical resistance measurement; Electrons; Frequency measurement; Geometry; Gold; Impedance measurement; Microwave measurements; Particle scattering;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272059