• DocumentCode
    2616368
  • Title

    AC characterization of top-gated carbon nanotube field effect transistors

  • Author

    Singh, D.V. ; Jenkins, K.A. ; Appenzeller, J. ; Wong, H.-S.P.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    206
  • Lastpage
    207
  • Abstract
    This paper presents the first demonstration of CNFET operation at frequencies as high as 100 MHz. The AC characterization of CNFETs at significantly higher frequencies is possible using a spectrum analyzer, if the cross-talk between the gate and the drain is sufficiently small. The measured cross-talk power, PCT on quartz is consistent with theoretical predictions and sufficiently small to measured the CNFET response up to several hundred MHz.
  • Keywords
    carbon nanotubes; field effect transistors; nanotube devices; 100 MHz; AC characterization; C; cross talk; drain; gate; quartz; top gated carbon nanotube field effect transistors; Bandwidth; CNTFETs; Capacitance measurement; Electrical resistance measurement; Frequency measurement; Impedance measurement; Oscilloscopes; Spectral analysis; Time measurement; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272062
  • Filename
    1272062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2616368