Title :
An asynchronous GaAs MESFET static RAM using a new current mirror memory cell
Author :
Chandna, A. ; Brown, R.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
An experimental 1 kB GaAs MESFET static RAM using a new memory cell has been designed, fabricated and tested. The new memory cell is not subject to the destructive read problems which constrain the design of the conventional six-transistor memory cell. The memory cell also provides a much larger access current for readout than is possible using a conventional memory cell of the same area and cell power. Address access times of 1.6 ns have been obtained from a 1 kb test circuit.<>
Keywords :
III-V semiconductors; MESFET integrated circuits; SRAM chips; asynchronous circuits; field effect memory circuits; gallium arsenide; nondestructive readout; 1 kB; 1.6 ns; GaAs; III-V semiconductor; MESFET static RAM; address access times; asynchronous; current mirror memory cell; nondestructive readout; Circuit testing; Digital integrated circuits; Diodes; Driver circuits; Gallium arsenide; MESFETs; Mirrors; Random access memory; Read-write memory; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394495
