A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs

Author

Maeda, T. ; Numata, K. ; Tokushima, M. ; Ishikawa, M. ; Fukaishi, M. ; Hida, H. ; Ohno, Y.

Author_Institution

NEC Corp., Tsukuba, Ibaraki, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

75

Lastpage

78

Abstract

The authors describe a new GaAs static flip flop, called TD-FF (tri-state driver flip flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. The authors also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.<>

Keywords

III-V semiconductors; JFET integrated circuits; direct coupled FET logic; driver circuits; field effect logic circuits; flip-flops; frequency dividers; gallium arsenide; very high speed integrated circuits; 0.8 V; 10 GHz; 10 Gbit/s; 18 mW; 38 mW; DCFL; GaAs; III-V semiconductor; heterojunction FET LSIs; high-speed; low-power; static flip flop; static frequency divider IC; tri-state driver flip flop; ultralow supply voltage; Circuit noise; Clocks; Coupling circuits; Energy consumption; FETs; Gallium arsenide; Helium; Latches; Sampling methods; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394496

Filename

394496