Title :
Process and device characteristics of Pd nanocrystals MOS memory
Author :
Sargentis, C. ; Giannakopoulos, K. ; Travlos, A. ; Tsamakis, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Tech. Univ. of Athens, Greece
Abstract :
In this work we describe the fabrication of a MOS memory with embedded palladium nanocrystals within a SiO2 layer. For the deposition of Pd nanocrystals we used the MBE method. Only a few studies have been devoted to metal nanocrystals, as memory elements, although they have many advantages in comparsion to semiconductor nanocrystals.
Keywords :
MOS memory circuits; molecular beam epitaxial growth; nanostructured materials; palladium; silicon compounds; MBE method; Pd nanocrystals MOS memory; Pd-SiO2; SiO2 layer; metal nanocrystals; Annealing; Atomic layer deposition; Atomic measurements; Fabrication; Hysteresis; Molecular beam epitaxial growth; Nanocrystals; Partial discharges; Silicon; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272068
