Title :
The analytic models for temperature dependence of the breakdown voltage of 6H- and 4H-SiC rectifiers
Author :
Lee, Y.S. ; Lee, W.O. ; Han, M.K. ; Choi, Y.I.
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
In this paper, the temperature dependence of the breakdown voltage of 6H-SiC and 4H-SiC rectifiers was modeled in both nonreachthrough diode (NRD) and reachthrough diode (RD). The breakdown voltage analysis was based on the ionization integral by accurate hole impact ionization coefficient and seventh order approximation. SiC rectifiers exhibited a positive temperature coefficient in breakdown voltage which is adequate for high temperature applications. The breakdown voltage was increased by M(T)-1/4 in NRDs and M(T)-18 in RDs both in 6H- and 4H-SiC
Keywords :
AC-DC power convertors; rectifiers; semiconductor device models; thermal analysis; thyristors; 4H-SiC rectifiers; 6H-SiC rectifiers; H-SiC; SCR; breakdown voltage; hole impact ionization coefficient; nonreachthrough diode; positive temperature coefficient; reachthrough diode; seventh order approximation; temperature dependence; thyristors; Avalanche breakdown; Diodes; Impact ionization; Integral equations; Photonic band gap; Poisson equations; Rectifiers; Silicon carbide; Temperature dependence; Thermal conductivity;
Conference_Titel :
Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International
Conference_Location :
Beijing
Print_ISBN :
7-80003-464-X
DOI :
10.1109/IPEMC.2000.882979
