A novel SONOS nonvolatile flash memory device using hot hole injection for write and tunneling to/from gate for erase

Author

Wang, Y. ; Zhao, Y. ; Khan, B.M. ; Doherty, C.L. ; Krayer, J.D. ; White, M.H.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

228

Lastpage

229

Abstract

A novel SONOS (polysilicon-oxide-nitride-oxide-silicon) nonvolatile flash memory device which uses hot hole injection through the bottom oxide for write and tunneling to/from the gate through a thin top oxide for erase, with reduced power consumption, improved retention and subthreshold swing is proposed. The dynamic characteristics along with comparisons to NROM technology, forward/reverse read I_DS ∼ I_GS characteristics, programming speeds and retention of SONOS device at room temperature are discussed.

Keywords

flash memories; semiconductor-insulator-semiconductor devices; tunnelling; 293 to 298 K; NROM technology; direct tunneling; dynamic characteristics; forward/reverse read; hot hole injection; nonvolatile flash memory device; polysilicon-oxide-nitride-oxide-silicon structure; power consumption; programming speed; room temperature; subthreshold swing; CMOS technology; Channel hot electron injection; Charge carrier processes; Electron traps; Energy consumption; Flash memory; Hot carriers; Nonvolatile memory; SONOS devices; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272073

Filename

1272073