A 3.5V, 1.3W GaAs power multichip IC for cellular phone

Author

Maeda, M. ; Nishijima, M. ; Takehara, H. ; Adachi, C. ; Fujimoto, H. ; Ota, Y. ; Ishikawa, O.

Author_Institution

Matsushita Electric Ind. Co., Ltd., Osaka, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

53

Lastpage

56

Abstract

A GaAs power multichip IC (MCIC) operating at 3.5 V for cellular phone has been developed. The MCIC can deliver an output power over 1.3 W with a power-added efficiency of 60% from 890 to 950 MHz. It is comprised of two GaAs MESFETs, three GaAs passive matching chips and a printed board on which biasing networks are fabricated. These components are mounted on an aluminum nitride (AlN) package. The volume of the MCIC is only 0.4 cc, half that of conventional power hybrid ICs. This MCIC will contribute to realization of high performance and very compact cellular phones.<>

Keywords

III-V semiconductors; MESFET integrated circuits; UHF field effect transistors; UHF integrated circuits; cellular radio; gallium arsenide; integrated circuit packaging; multichip modules; power MESFET; power field effect transistors; power integrated circuits; 1.3 W; 3.5 V; 890 to 950 MHz; AlN package; GaAs; III-V semiconductor; MESFETs; biasing networks; cellular phone; high performance; passive matching chips; power multichip IC; power-added efficiency; printed board; very compact; Cellular phones; Circuits; FETs; Frequency; Gallium arsenide; Low voltage; MESFETs; MMICs; Packaging; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394501

Filename

394501