An L-band ultra low power consumption monolithic low noise amplifier [for mobile communication]

Author

Nakatsugawa, M. ; Yamaguchi, Y. ; Muraguchi, M.

Author_Institution

NTT Radio Commun. Syst. Lab., Kanagawa, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

45

Lastpage

48

Abstract

A low-power-consumption variable-gain low noise amplifier (LNA) is developed. In order to achieve low noise, high gain, low distortion and low power consumption simultaneously, a cascode connection between an enhancement-mode GaAs MESFET (EFET) and a depletion-mode GaAs (DFET) is employed. The amplifier shows state-of-the-art performance with NF of 2.0 dB, gain of 12.2 dB and IP3 of 5.1 dBm at 1.9 GHz at power consumption of 2.0 mW, and NF of 2.4 dB, gain of 10.2 dB and IP3 of 2.7 dBm at 1 mW. Moreover, the LNA´s gain is controllable according to the receiving level and it can be turned off while the transmitter is operating.<>

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; field effect MMIC; gallium arsenide; mobile radio; 1 mW; 1.9 GHz; 10.2 dB; 12.2 dB; 2 dB; 2 mW; 2.4 dB; GaAs; III-V semiconductor; L-band; MESFET; MMIC; cascode connection; controllable gain; depletion-mode; enhancement-mode; high gain; low distortion; mobile communication; monolithic low noise amplifier; ultralow power consumption; variable-gain; Batteries; Circuits; Energy consumption; Gallium arsenide; L-band; Low-noise amplifiers; Mobile communication; Noise measurement; Performance gain; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394503

Filename

394503