Title :
The field effect diode
Author :
Taghibakhsh, Farhad
Abstract :
The fabrication of field effect diode (FED) as a planar pin diode with two gates over its intrinsic region using SOI technology is presented in this paper. The voltage applied to the gates, changes the barrier height against carriers and therefore modulates diode current. Based on an accurate numeric simulation, the operation of the device has been explained, the analytical I-V relationship has been extracted, dynamic characteristics of the device has been calculated and the effect of device parameters on its electrical behavior has been studied. Obtained results show that the FED realizes a voltage controlled voltage source.
Keywords :
active networks; elemental semiconductors; field effect devices; p-i-n diodes; semiconductor device models; silicon-on-insulator; SOI technology; Si; analytical I-V relationship; device parameters; diode current; dynamic properties; field effect diode; intrinsic region; numeric simulation; planar pin diode; silicon on insulator; voltage controlled voltage source; Analytical models; Diodes; Doping; Equations; Numerical simulation; Pulse circuits; Switching frequency; Threshold voltage; Time factors; Voltage control;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272077
