Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs

Author

Russell-Harriott, J.J. ; Zou, J. ; Cockayne, D.J.H. ; Moon, A.R. ; Usher, B.F.

Author_Institution

Microstruct. Anal. Unit, Univ. of Technol., Sydney, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

138

Lastpage

141

Abstract

Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of misfit dislocations. Also associated with the oval defects is a highly luminescent halo which gives rise to a peak on the low energy side of the InGaAs peak in the CL spectrum. The dislocation density is shown to oscillate along the sample and this oscillation can be partly explained by the presence of the oval defects

Keywords

III-V semiconductors; cathodoluminescence; dislocation density; dislocation nucleation; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; 5 K; InGaAs-GaAs; MBE growth; cathodoluminescence; dislocation density; misfit dislocation nucleation; oval defect; semiconductor heterostructure; Australia; Electron microscopy; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Instruments; Molecular beam epitaxial growth; Substrates; Surface contamination; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610091

Filename

610091