Structure, chemistry, and electrical performance of silicon oxide-nitride-oxide stacks on silicon

Author

Levin, I. ; Kovler, M. ; Leapman, R.D. ; Yoder, D. ; Fischer, D. ; Roizin, Ya

Author_Institution

Div. of Ceramics, Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

248

Lastpage

249

Abstract

In this study (i) spatially-resolved electron-energy loss spectroscopy (EELS) in a transmission electron microscope and (ii) secondary ion mass spectroscopy (SIMS) were applied to analyze elemental distributions in the differently processed ONO stacks deposited on Si. Also densities of individual layers in the ONA stacks were measured using X-ray reflectometry (XRR).

Keywords

X-ray reflection; chemical structure; electron energy loss spectra; elemental semiconductors; interface structure; multilayers; secondary ion mass spectra; silicon; silicon compounds; transmission electron microscopy; EELS; SIMS; Si-SiO₂; X-ray reflectometry; electrical properties; elemental distributions; secondary ion mass spectroscopy; silicon; silicon oxide-nitride-oxide stacks; spatially-resolved electron-energy loss spectroscopy; transmission electron microscopy; Chemical analysis; Chemical vapor deposition; Chemistry; Density measurement; Hydrogen; Mass spectroscopy; Nitrogen; Silicon; Solids; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272082

Filename

1272082