Title :
HBT oscillator and mixer
Author :
Wang, H. ; Algani, C. ; LaPorte, M.
Author_Institution :
CNET, Bagneux, France
Abstract :
GaAs/GaAlAs heterojunction bipolar transistors (HBTs) have been fabricated. The low phase noise characteristics of HBT oscillators have been investigated and the first HBT mixer was fabricated and measured. The full experimental results are presented. A conversion factor of 4.5×1010 Hz/A has been obtained in a free-running 8-GHz oscillator. The first HBT mixer has shown a third-order intercept point comparable to a MESFET
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistor circuits; gallium arsenide; heterojunction bipolar transistors; microwave oscillators; mixers (circuits); solid-state microwave circuits; 8 GHz; GaAs-GaAlAs heterojunction bipolar transistors; HBT mixer; HBT oscillators; conversion factor; free running oscillator; low phase noise characteristics; semiconductors; third-order intercept point; Doping; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; MESFETs; Noise measurement; Oscillators; Phase noise; Silicon;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.111961
