DocumentCode
2616770
Title
HBT oscillator and mixer
Author
Wang, H. ; Algani, C. ; LaPorte, M.
Author_Institution
CNET, Bagneux, France
fYear
1990
fDate
1-3 May 1990
Firstpage
1728
Abstract
GaAs/GaAlAs heterojunction bipolar transistors (HBTs) have been fabricated. The low phase noise characteristics of HBT oscillators have been investigated and the first HBT mixer was fabricated and measured. The full experimental results are presented. A conversion factor of 4.5×1010 Hz/A has been obtained in a free-running 8-GHz oscillator. The first HBT mixer has shown a third-order intercept point comparable to a MESFET
Keywords
III-V semiconductors; aluminium compounds; bipolar transistor circuits; gallium arsenide; heterojunction bipolar transistors; microwave oscillators; mixers (circuits); solid-state microwave circuits; 8 GHz; GaAs-GaAlAs heterojunction bipolar transistors; HBT mixer; HBT oscillators; conversion factor; free running oscillator; low phase noise characteristics; semiconductors; third-order intercept point; Doping; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; MESFETs; Noise measurement; Oscillators; Phase noise; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location
New Orleans, LA
Type
conf
DOI
10.1109/ISCAS.1990.111961
Filename
111961
Link To Document