Germanium pMOSFET with HfON gate dielectric

Author

Zhang, Qingchun ; Wu, Nan ; Zhu, Chunxiang ; Li, M.F. ; Chan, DSH ; Chin, Albert ; Kwong, D.L. ; Bera, L.K. ; Balasubramanian, N. ; Du, A.Y. ; Tung, C.H. ; Liu, Haitao ; Sin, Johnny K O

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

256

Lastpage

257

Abstract

In this paper, we study about the electrical performance of Ge MOSFET with a thin HfO_xN_y gate dielectrics. The capacitance-voltage and gate leakage current-voltage characteristics of HfON Ge MOS capacitor was discussed. Sheet resistances are reduced with increasing the annealing temperatures from 360°C to 650°C. Effective carrier mobility of Ge MOSFET was extracted by measuring the gate oxide capacitance and inversion charge. The transconductance and the transfer curves of Ge MOSFET was analysed at room temperature.

Keywords

MOS capacitors; MOSFET; annealing; dielectric materials; elemental semiconductors; germanium; hafnium compounds; hole mobility; 293 to 298 K; 360 to 650 degC; Ge-HfON; HfON Ge MOS capacitor; HfON gate dielectrics; annealing; capacitance-voltage curves; carrier mobility; electrical performance; gate leakage current-voltage curves; gate oxide capacitance; germanium pMOSFET; inversion charge; room temperature; sheet resistance reduction; transconductance; transfer curves; Capacitance-voltage characteristics; Current-voltage characteristics; Dielectrics; Gate leakage; Germanium; Hafnium oxide; Leakage current; MOS capacitors; MOSFET circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272086

Filename

1272086