Circuit performance of double-gate SOI CMOS

Author

Lin, C.-H. ; Su, P. ; Taur, Y. ; Xi, X. ; He, I. ; Niknejad, A.M. ; Chan, M. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

266

Lastpage

267

Abstract

The paper presents the performance of double-gate MOSFETs (DG MOSFET) in the circuit design perspective is examined via simulation using device structures based on the ITRS specification. The propagation delay (t_pd) and energy dissipation of DG CMOS inverter chains with different number of fan-out (FO) are investigated. Load capacitors are added to the output node of each inverter to simulate the parasitic wiring capacitance (C_int) between two stages, assuming reasonable input time and output loading capacitance. The performance result showed superiority of SDG device (symmetric double-gate device) over ADG device (asymmetric double-gate device) in speed and energy efficiency. Performance evaluation indicates that SDG SOI CMOS is the promising device for next generation high performance CMOS technology.

Keywords

CMOS digital integrated circuits; circuit simulation; integrated circuit design; integrated circuit modelling; mixed analogue-digital integrated circuits; silicon-on-insulator; CMOS inverter chains; CMOS technology; Si; asymmetric double-gate device; circuit design; circuit performance evaluation; circuit simulation; complementary metal-oxide-semiconductor; double-gate MOSFET; double-gate SOI CMOS; energy dissipation; load capacitors; metal-oxide-semiconductor FET; parasitic wiring capacitance; propagation delay; silicon-on-insulator; symmetric double-gate device; CMOS technology; Capacitors; Circuit optimization; Circuit simulation; Circuit synthesis; Energy dissipation; Inverters; MOSFETs; Parasitic capacitance; Propagation delay;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272091

Filename

1272091