Title :
A novel high current gain lateral PNP transistor on SOI for complementary bipolar technology
Author :
Kumar, M. Jagadesh ; Parihar, Vinod
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
Abstract :
In order to improve driver performance of PNP transistor high current gain is required but PNP transistor exhibits low current gain due to poor hole mobility. In this paper a novel high current gain lateral PNP transistor on SOI for complementary bipolar technology is presented. The paper also presents the demonstration of a significant current gain enhancement in a PNP transistor using simple surface accumulation layer transistor that is compatible with standard BiCMOS technology.
Keywords :
accumulation layers; bipolar transistors; silicon-on-insulator; BiCMOS technology; SOI; Si; bipolar CMOS technology; complementary bipolar technology; current gain enhancement; high current gain lateral PNP transistor; silicon-on-insulator; surface accumulation layer transistor; Bipolar transistor circuits; Contacts; Cutoff frequency; Doping profiles; Driver circuits; Electron emission; Feedback amplifiers; Feedback circuits; Mirrors; Silicon germanium;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272092
