Title :
An approach to low-cost fabrication of lateral COOLMOS structures
Author :
Shahrjerdi, D. ; Hekmatshoar, B. ; Khakifirooz, A. ; Fathipour, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tehran Univ., Iran
Abstract :
The main building block of COOLMOS device is a combination of parallel n- and p- strips, which is called as superjunction. Unique capability of the superjunction is an efficient sustained voltage when the transistor is in OFF-state. This paper presents the fabrication of the lateral COOLMOS structures on SOI substrate. Dessis simulator has been employed to characterize the COOLMOS structure. The depletion region edge during ON-state operation of COOLMOS structure is depicted. The n+ source region is formed by resist-masked implantation of antimony, followed by annealing to activate the dopants.
Keywords :
annealing; antimony; ion implantation; power MOSFET; semiconductor device models; SOI substrate; Sb; Si; annealing; antimony; cost reduction; depletion region edge; lateral COOLMOS structure fabrication; low-cost fabrication; on-chip realization; resist-masked implantation; superjunction; sustained voltage; Annealing; Boron; Costs; Epitaxial growth; Fabrication; MOSFETs; Strips; Substrates; Tungsten; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272093
