Title :
Design and fabrication of an InP-based moving waveguide 1×2 optical MEMS switch
Author :
Pruessner, M.W. ; Kelly, D. ; Datta, M. ; Lim, H. ; Maboudian, R. ; Ghodssi, R.
Author_Institution :
Maryland Univ., MD, USA
Abstract :
Design and fabrication of 1×2 InP-based MEMS moving waveguide optical switch with low switching voltage and low loss is presented. The basic layer structure of the waveguide is 4 μm thick and consists of 1.8 μm In0.53Ga0.47As sacrificial layer grown by MBE on a (100) semi-insulating InP substrate. Mechanical and optical design characteristics of this device is also presented. The waveguides are designed with Δn=0.02 and a cross section of 2 μm by 2 μm which minimizes the coupling loss between input and output waveguides.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; microswitches; optical couplers; optical switches; optical waveguides; semiconductor epitaxial layers; tensile strength; 1.8 micron; 4 micron; InGaAs; InP; InP-based moving waveguide; MBE layer; coupling loss; mechanical properties; microelectromechanical system; optical MEMS switch; optical properties; semi insulating InP substrate; waveguide layer structure; Indium phosphide; Micromechanical devices; Optical attenuators; Optical design; Optical device fabrication; Optical scattering; Optical switches; Optical waveguides; Suspensions; Tensile stress;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272096
