DocumentCode :
2617068
Title :
Technological hybridization for efficient runtime reconfigurable FPGAs
Author :
Bruchon, N. ; Torres, L. ; Sassatelli, G. ; Cambon, G.
Author_Institution :
UMR CNRS, Montpellier Univ.
fYear :
2007
fDate :
9-11 March 2007
Firstpage :
29
Lastpage :
34
Abstract :
The goal of this paper is to propose an FPGA using emerging non volatile technologies for its configuration memory. Studies on magnetic memories have already been carried out (Bruchon et al., 2006) but solid electrolyte and phase change memories are also good candidates for such type of application. Features of these technologies can provide some interesting characteristics to the FPGA such as short writing time with non volatile technology. A small structure (RSRAM) for remanent SRAM is used to convert information from these technologies into electrical information. This structure naturally provides some more features like partial and shadowed reconfiguration
Keywords :
field programmable gate arrays; integrated memory circuits; random-access storage; RSRAM; configuration memory; magnetic memories; nonvolatile technologies; partial reconfiguration; phase change memories; remanent SRAM; runtime reconfigurable FPGA; shadowed reconfiguration; solid electrolyte; technological hybridization; Field programmable gate arrays; Integrated circuit technology; Magnetic properties; Magnetic tunneling; Phase change materials; Phase change memory; Random access memory; Runtime; Solids; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI, 2007. ISVLSI '07. IEEE Computer Society Annual Symposium on
Conference_Location :
Porto Alegre
Print_ISBN :
0-7695-2896-1
Type :
conf
DOI :
10.1109/ISVLSI.2007.96
Filename :
4208890
Link To Document :
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