Title :
A new spin on electronics - spintronics
Author_Institution :
Virginia Univ., Charlottesville, VA, USA
Abstract :
This paper describes about the discovery of the giant magnetoresistance effect in magnetic multilayers in 1998 and the subsequent development of sensors based on it and the introduction of a new nonvolatile magnetic memory based on a spin dependent tunneling structure that potentially can be a universal replacement for existing semiconductor memories both volatile and nonvolatile. The development of the new field of spin electronics or spintronics is also discussed.
Keywords :
giant magnetoresistance; magnetic multilayers; magnetic storage; magnetoelectronics; giant magnetoresistance effect; magnetic multilayers; nonvolatile magnetic memory; semiconductor memories; spin dependent tunneling structure; spintronics; Electrons; Gallium arsenide; Giant magnetoresistance; Magnetic memory; Magnetic multilayers; Magnetic sensors; Magnetic tunneling; Magnetoelectronics; Nonvolatile memory; Semiconductor memory;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272106
