Gallium-arsenide deep-level devices for 1.55 μm fiber-optics

Author

Pan, Janet L. ; McManis, Joseph E. ; Osadchy, Thomas ; Grober, Louise ; Woodall, Jerry M.

Author_Institution

Yale Univ., New Haven, CT, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

304

Lastpage

305

Abstract

The first light emitting diode (LED) emitting at 1.5 μm fiber-optic wavelengths in GaAs utilizing arsenic-antisite (As_Ga) deep-level optical-transitions is demonstrated. This is an enabling technology for fiber-optic components lattice-matched to GaAs ICs. The first tunnel diodes utilizing deep-levels in low-temperature-grown (LTG) GaAs and the experimental results for significant internal optical power (24 mW) and speed (THz) from GaAs deep-level optical emitters are also demonstrated. The first measurement of room-temperature electroluminescence from As_GA is studied.

Keywords

III-V semiconductors; antisite defects; conduction bands; deep levels; electroluminescence; gallium arsenide; light emitting diodes; monolithic integrated circuits; optical fibres; tunnel diodes; valence bands; 1.55 micron; 24 mW; 293 to 298 K; GaAs; arsenic antisite; conduction bands; deep level optical emitters; electroluminescence; fiber optic wavelengths; gallium arsenide deep level devices; gallium arsenide integrated circuits; light emitting diode; low temperature grown GaAs; optical power; room temperature; tunnel diodes; valence bands; Current measurement; Extraterrestrial measurements; Fiber lasers; Gallium arsenide; Light emitting diodes; Optical devices; Optical fiber devices; Optical modulation; Quantum cascade lasers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272108

Filename

1272108