DocumentCode :
2617197
Title :
Gallium-arsenide deep-level devices for 1.55 μm fiber-optics
Author :
Pan, Janet L. ; McManis, Joseph E. ; Osadchy, Thomas ; Grober, Louise ; Woodall, Jerry M.
Author_Institution :
Yale Univ., New Haven, CT, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
304
Lastpage :
305
Abstract :
The first light emitting diode (LED) emitting at 1.5 μm fiber-optic wavelengths in GaAs utilizing arsenic-antisite (AsGa) deep-level optical-transitions is demonstrated. This is an enabling technology for fiber-optic components lattice-matched to GaAs ICs. The first tunnel diodes utilizing deep-levels in low-temperature-grown (LTG) GaAs and the experimental results for significant internal optical power (24 mW) and speed (THz) from GaAs deep-level optical emitters are also demonstrated. The first measurement of room-temperature electroluminescence from AsGA is studied.
Keywords :
III-V semiconductors; antisite defects; conduction bands; deep levels; electroluminescence; gallium arsenide; light emitting diodes; monolithic integrated circuits; optical fibres; tunnel diodes; valence bands; 1.55 micron; 24 mW; 293 to 298 K; GaAs; arsenic antisite; conduction bands; deep level optical emitters; electroluminescence; fiber optic wavelengths; gallium arsenide deep level devices; gallium arsenide integrated circuits; light emitting diode; low temperature grown GaAs; optical power; room temperature; tunnel diodes; valence bands; Current measurement; Extraterrestrial measurements; Fiber lasers; Gallium arsenide; Light emitting diodes; Optical devices; Optical fiber devices; Optical modulation; Quantum cascade lasers; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272108
Filename :
1272108
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2617197
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