Drift dominated InP/GaP photodiodes

Author

Sun, Yanning ; Yulius, Aristo ; Li, Guolin ; Woodall, Jerry M.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

306

Lastpage

307

Abstract

The design of the drift dominated devices is focused in this paper. In this device GaP used as buffer layer between InP and Si since GaP is lattice matched to Si. The carrier concentration profile, and dark current voltage characteristics of InP/GaP photodiodes are discussed. The surface roughness of 2.48 nm is analysed by AFM. The results indicate that the drift dominated InP/GaP photodiodes have good spectral respose especially 40% internal quantum efficiency at shorter wavelength, which demonstrates the robustness of the drift dominated devices with the existence of dislocations and recombination centers.

Keywords

III-V semiconductors; atomic force microscopy; carrier density; dark conductivity; dislocations; elemental semiconductors; indium compounds; photodiodes; silicon; surface roughness; AFM; GaP buffer layer; GaP-InP:Si; carrier concentration profile; dark current voltage properties; dislocations; drift dominated InP/GaP photodiodes; drift velocity; lattice matching; quantum efficiency; recombination centers; surface roughness; Buffer layers; Dark current; Indium phosphide; Lattices; Photodiodes; Radiative recombination; Robustness; Rough surfaces; Surface roughness; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272109

Filename

1272109