Title :
Effect of polySi/high-κ interface on device reliability
Author :
Wang, X.W. ; Bu, H.M. ; Ma, T.P. ; Tseng, H. ; Tobin, Phil
Author_Institution :
Yale Univ., New Haven, CT, USA
Abstract :
The effects of hot-carrier injection on the reliability of both n-and p-channel MOSFETs with HfO2 as the gate dielectric is reported in this paper. The polySi/HfO2/Si MOS structure illustrates possible structural differences between the polySi/HfO2 interface and the HfO2/substrate-Si interface. Electron trapping probability is dominant in nMOSFET during constant-voltage stress over the entire voltage range, while in pMOSFET, hole trapping probability is appreciable above the stress voltage of -2.6 V. Gate leakage currents are measured using a carrier separation technique. Stress voltage dependence of electron trapping probability diminishes as an ultra-thin SiNx layer is added in between HfO2 and the poly silicon gate.
Keywords :
MOSFET; dielectric materials; electron traps; elemental semiconductors; hafnium compounds; hole traps; hot carriers; leakage currents; semiconductor device reliability; silicon; silicon compounds; HfO2/substrate-Si interface; Si-HfO2-Si-SiN; carrier separation; constant voltage stress; device reliability; electron trapping probability; gate dielectric; gate leakage currents; hole trapping probability; hot carrier injection; n-channel MOSFET; p-channel MOSFET; polySi-high-κ interface; polySi/HfO2 interface; polySi/HfO2/Si MOS structure; stress voltage dependence; ultra thin SiNx layer; Charge carrier processes; Current measurement; Dielectric substrates; Electron traps; Hafnium oxide; Hot carrier injection; Leakage current; MOSFET circuits; Stress; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272116
