Title :
Electrical characterization of dielectrics (oxide, nitride, oxy-nitride) for use in MIM capacitors for mixed signal applications
Author :
Prasad, Jagdish ; Anser, Muhammed ; Thomason, Mike
Author_Institution :
AMI Semicond. Inc., Pocatello, ID, USA
Abstract :
Electrical characterization of the MIM (metal-insulator-metal) capacitor for RF circuits used in mixed signal devices is presented in this paper. Characterization and evaluation of Nitride, Oxide or Oxynitride as the dielectric materials is also presented. MIM module structure is a six-mask process with three levels of metallization. Capacitance as a function of dielectric film thickness for various dielectric materials and alloying effects on the silicon nitride MIM capacitor linearity are presented. Hysteresis characterization and modeling is used to improve analog circuit performance.
Keywords :
MIM devices; aluminium alloys; capacitance; capacitors; copper alloys; dielectric hysteresis; dielectric materials; dielectric thin films; metallisation; silicon compounds; titanium; titanium compounds; MIM capacitors; MIM module structure; RF circuits; SiON; Ti-TiN-AlCu-TiN; alloying effects; capacitance; dielectric film; dielectric materials; electrical characterization; hysteresis characterization; metal-insulator-metal capacitor; metallization; mixed signal applications; mixed signal devices; six mask process; Alloying; Capacitance; Circuits; Dielectric films; Dielectric materials; MIM capacitors; Metal-insulator structures; Metallization; RF signals; Radio frequency;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272117
