Mobility of (112~0) and (0001) orientated 4H-SiC quantized inversion layers

The paper investigates the effects of the inversion layer quantization at the SiO₂-4H-SiC interface for the (0001) and (112~0) crystalline orientations. Monte Carlo simulations of electron transport show that the mobility does decrease as a direct result of the reduction of interface traps at the (112~0) surface. In inversion layer the bulk band edges is split into subband levels perpendicular to the oxide interface. These levels are calculated for 4H-SiC self-consistently using the Hartree approximation. The paper also presents the comparison results of Monte Carlo simulation and experimental data for (0001) 4H-SiC.