DocumentCode
2617422
Title
Single Event Upset in SRAM-based Field Programmable Analog Arrays: Effects and Mitigation
Author
Balen, Tiago R. ; Kastensmidt, Fernanda Lima ; Lubaszewski, Marcelo S. ; Renovell, M.
Author_Institution
Dept. de Engenharia Eletrica, Univ. Fed. do Rio Grande do Sul, Porto Alegre
fYear
2007
fDate
9-11 March 2007
Firstpage
192
Lastpage
197
Abstract
In this work the problem of single event upset (SEU) is considered to a new analog technology: the field programmable analog arrays (FPAAs). Some FPAA models are based on SRAM memory cells to implement the user programmability. For this reason, such kind of device becomes vulnerable to SEU when employed in applications susceptible to the incidence of electrical charged particles. In the former part of this work some fault injection experiments are made in order to investigate the effects of SEU in the SRAM blocks of a commercial FPAA. For this purpose, single bit inversions are injected in the FPAA programming bit-stream. In a second moment, a self-recovering scheme using the studied FPAA is proposed. This scheme is able to restore the original programming data if an error is detected. The error detection circuit is built using the internal programming resources of the FPAA and a very simple external logic.
Keywords
SRAM chips; error detection; fault simulation; field programmable analogue arrays; radiation hardening (electronics); FPAA; SRAM memory cells; error detection; fault injection; field programmable analog arrays; single event upset; user programmability; Analog circuits; Circuit faults; Digital circuits; Field programmable analog arrays; Field programmable gate arrays; Logic programming; Programmable logic arrays; Random access memory; Single event upset; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI, 2007. ISVLSI '07. IEEE Computer Society Annual Symposium on
Conference_Location
Porto Alegre
Print_ISBN
0-7695-2896-1
Type
conf
DOI
10.1109/ISVLSI.2007.91
Filename
4208915
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