Scaling and reliability of deeply scaled SOI CMOS

This paper presents the latest results from the literature, concerning the performance and reliability of extremely scaled FD transistors. Numerical simulations showed that scalability of FD-SOI is achievable by using exotic gate materials to control the threshold voltage and lowly doped/undoped channels and thinning the silicon film and buried oxide to control the short channel effects. As the film thickness is reduced the effective junction depth is reduced which strengthens the front gate control of the back surface potential and improves the short channel effects. The hot carrier reliability of SOI CMOS was unknown as carriers can get hot at very low voltages and channel coupling and floating body complicates the effects of the induced degradation.