Experimental study on the mobility universality in ultra thin body SOI pMOSFETs

This paper describes the mobility in ultra thin body SOI pMOSFETs. It is experimentally demonstrated that the mobility in 10.2-nm-thick SOI pMOSFET degrades only due to the increased acoustic phonon scattering, while other degradation mechanisms appear in 4.3-nm-thick device. It is also demonstrated that the mobility in 4.3-nm-thick device shows universal characteristics against effective electric field for various substrate biases, which is the same behavior as bulk MOSFETs.