DocumentCode
2617644
Title
An analytical model of SiC MESFETs incorporating trapping and thermal effects
Author
Mukherjee, Sankha S. ; Islam, Syed S. ; Bowman, Robert J.
Author_Institution
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
366
Lastpage
367
Abstract
In this paper presents an analytical model of SiC-based MESFET device incorporating trapping and self-heating effects is essential for the evaluation of device performance in microwave applications. Surface and substrate traps have been incorporated in the model to calculate the observed current slump in the I-V characteristics. The differences in the I-V characteristics observed is due to the differences in thermal conditions of the substrate prevalent at the time of measurement.
Keywords
Schottky gate field effect transistors; microwave field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; SiC-based MESFET device; self-heating effects; semiconductor device modelling; thermal effects; trapping effects; Analytical models; Buffer layers; Electron traps; MESFETs; Microwave devices; Silicon carbide; Substrates; Surface resistance; Thermal engineering; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272138
Filename
1272138
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