Title :
An analytical model of SiC MESFETs incorporating trapping and thermal effects
Author :
Mukherjee, Sankha S. ; Islam, Syed S. ; Bowman, Robert J.
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
In this paper presents an analytical model of SiC-based MESFET device incorporating trapping and self-heating effects is essential for the evaluation of device performance in microwave applications. Surface and substrate traps have been incorporated in the model to calculate the observed current slump in the I-V characteristics. The differences in the I-V characteristics observed is due to the differences in thermal conditions of the substrate prevalent at the time of measurement.
Keywords :
Schottky gate field effect transistors; microwave field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; SiC-based MESFET device; self-heating effects; semiconductor device modelling; thermal effects; trapping effects; Analytical models; Buffer layers; Electron traps; MESFETs; Microwave devices; Silicon carbide; Substrates; Surface resistance; Thermal engineering; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272138
