Title :
Noise analysis of current copier circuits
Author :
Daubert, Steven J. ; Vallancourt, David
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
An analysis of the noise characteristics of the most basic current copier cell is presented. Since MOS transistors are used, both thermal and 1/f noise sources occur. Because of sampling, the noise appearing at the output contains both sampled and continuous components. An expression is described for the power spectral density of the output current noise, allowing an assessment of the relative importance of each of the noise sources in a current copier application. A measurement of the noise spectrum of the current copier is shown
Keywords :
active networks; electron device noise; field effect transistor circuits; 1/f noise sources; MOS transistors; current copier cell; current copier circuits; output current noise; power spectral density; thermal noise; Circuit noise; Crosstalk; Impedance; MOS capacitors; MOSFETs; Sampling methods; Switches; Transconductors; Voltage; White noise;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112021
