Title :
Recent results in InGaP Schottky diodes and GaP FETs
Author :
Chen, A. ; Woodall, J.M.
Author_Institution :
Yale Univ., New Haven, CT, USA
Abstract :
The paper presents the recent results in InGaP Schottky diodes and GaP FET. InAs/InGaP semiconductor-semiconductor (S-S) Schottky rectifiers was proposed to utilize the thermal stability of the semiconductor-semiconductor interface and it displayed ideal Schottky diode characteristics. In the stability test the diode withstands temperature up to 600 °C. Ga-P based MESFET is simpler in fabrication and faster in response as a majority-carrier device. The current-voltage characteristics of the gate Schottky diode showed low reverse leakage current before breakdown. Wide band gap and high minority carrier lifetime for an indirect bandgap material, GaP JFET is expected to have even smaller leakage and higher breakdown electric field.
Keywords :
III-V semiconductors; Schottky diodes; Schottky gate field effect transistors; carrier lifetime; gallium compounds; indium compounds; leakage currents; minority carriers; semiconductor device breakdown; thermal stability; 600 degC; GaP FET; InGaP; InGaP Schottky diodes; Schottky gate field effect transistors; Schottky rectifiers; bandgap; breakdown electric field; majority-carrier device; minority carrier lifetime; reverse leakage current; semiconductor device breakdown; semiconductor-semiconductor interface; stability test; thermal stability; Electric breakdown; FETs; Fabrication; MESFETs; Rectifiers; Schottky diodes; Semiconductor diodes; Temperature; Testing; Thermal stability;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272141
