A low-power high-speed 10-bit CMOS-compatible D/A converter

Author

Singor, Henry W. ; Salama, C. Andre T

Author_Institution

Dept. of Electr. Eng., Toronto Univ., Ont., Canada

fYear

1990

fDate

1-3 May 1990

Firstpage

311

Abstract

A 10-b multiple-current-source-type D/A converter implemented in a 3-μm PO-well CMOS process using CMOS-compatible split-collector lateral bipolar transistors as unit current sources is discussed. This convertor requires an active area of 1.3 mm² and is capable of operating a full-scale (FS) currents ranging from 50 nA to 1 mA. High switching speed is obtained at low current levels through improved current switch design. Test results show that differential nonlinearity is typically ±0.05% FS, integral nonlinearity is ±0.04% FS and the settling time is 30 ns

Keywords

CMOS integrated circuits; digital-analogue conversion; 10 bit DACs; 3 micron; 30 ns; 50 nA to 1 mA; CMOS-compatible D/A converter; CMOS-compatible split-collector lateral bipolar transistors; PO-well CMOS process; active area; current scaling DACs; current switch design; differential nonlinearity; integral nonlinearity; low power high speed DACs; multiple-current-source-type D/A converter; settling time; unit current sources; Bipolar transistors; CMOS process; Circuits; Digital-analog conversion; Geometry; Low-noise amplifiers; MOS devices; MOSFETs; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., IEEE International Symposium on

Conference_Location

New Orleans, LA

Type

conf

DOI

10.1109/ISCAS.1990.112023

Filename

112023