A novel interband-resonant-tunneling-diode(I-RTD) based high-frequency oscillator

Author

Woolard, Dwight ; Weidong Zhang ; Gelmont, Boris

Author_Institution

US Army Res. Office, Research Triangle Park, NC, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

376

Lastpage

377

Abstract

A novel type of interband-RTD (I-RTD) based upon staggered-bandgap heterostructures was investigated. A detailed theoretical analysis of the time-dependent characteristics of an I-RTD based upon a type-II resonant tunneling heterostructure is presented. Specifically, an AlGaSb/InAs/AlGaSb double-barrier structure was considered to determine the influence of multi-band transport effects on the static and dynamic behavior of the I-RTD device.

Keywords

III-V semiconductors; VHF oscillators; aluminium compounds; gallium compounds; indium compounds; resonant tunnelling diodes; semiconductor device models; AlGaSb-InAs-AlGaSb; double barrier structure; dynamic properties; high frequency oscillator; interband RTD; interband resonant tunneling diode; multiband transport effects; resonant tunneling heterostructure; staggered bandgap heterostructures; static properties; time dependent characteristics; Circuits; Diodes; Electric resistance; Electrons; Laboratories; Military computing; Oscillators; Power engineering and energy; Quantum wells; Resonant tunneling devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272142

Filename

1272142