Title :
A novel interband-resonant-tunneling-diode(I-RTD) based high-frequency oscillator
Author :
Woolard, Dwight ; Weidong Zhang ; Gelmont, Boris
Author_Institution :
US Army Res. Office, Research Triangle Park, NC, USA
Abstract :
A novel type of interband-RTD (I-RTD) based upon staggered-bandgap heterostructures was investigated. A detailed theoretical analysis of the time-dependent characteristics of an I-RTD based upon a type-II resonant tunneling heterostructure is presented. Specifically, an AlGaSb/InAs/AlGaSb double-barrier structure was considered to determine the influence of multi-band transport effects on the static and dynamic behavior of the I-RTD device.
Keywords :
III-V semiconductors; VHF oscillators; aluminium compounds; gallium compounds; indium compounds; resonant tunnelling diodes; semiconductor device models; AlGaSb-InAs-AlGaSb; double barrier structure; dynamic properties; high frequency oscillator; interband RTD; interband resonant tunneling diode; multiband transport effects; resonant tunneling heterostructure; staggered bandgap heterostructures; static properties; time dependent characteristics; Circuits; Diodes; Electric resistance; Electrons; Laboratories; Military computing; Oscillators; Power engineering and energy; Quantum wells; Resonant tunneling devices;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272142
