Title :
Fundamentals of high-field electron transport in nitride semiconductors for terahertz applications
Author :
Kim, K.W. ; Sokolov, V.N. ; Kochelap, V.A. ; Korotyeyev, V.V. ; Woolard, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this report, we discuss the basic properties of transient hot-electron transport and high-frequency conductivity in group-III nitrides that determine their capability for applications in THz frequency range. Bulk samples, ultra-short diodes as well as quantum heterostructures are considered.
Keywords :
III-V semiconductors; aluminium compounds; electrical conductivity; gallium compounds; high-frequency effects; semiconductor diodes; semiconductor heterojunctions; submillimetre wave diodes; wide band gap semiconductors; AlGaN-GaN; group-III nitrides; high-field electron transport; high-frequency conductivity; nitride semiconductors; quantum heterostructures; transient hot-electron transport; ultra-short diodes; Conductivity; Electron optics; Frequency estimation; Geometrical optics; Optical pumping; Optical scattering; Particle scattering; Phonons; Stimulated emission; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272143
