DocumentCode :
2617770
Title :
A system-level analysis of Schottky diodes for incoherent THz imaging arrays
Author :
Brown, E.R.
Author_Institution :
California Univ., Los Angeles, CA, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
380
Lastpage :
381
Abstract :
This paper examines modern Schottky diodes as direct detectors in a focal-plane imaging array using a model that accounts for the following: small-signal impedance and THz coupling; square-law rectification parameterised by ideality factor and temperature; thermal, shot, flicker and burst noise; and post-detection center frequency and integration time. The model computes the noise equivalent power (NEP), noise-equivalent delta temperature (NEΔT), and image acquisition time (IAT).
Keywords :
Schottky diodes; burst noise; flicker noise; semiconductor device noise; shot noise; submillimetre wave imaging; thermal noise; Schottky diodes; THz coupling; burst noise; flicker noise; focal plane imaging array; image acquisition time; incoherent THz imaging arrays; noise equivalent delta temperature; noise equivalent power; post detection center frequency; shot noise; small signal impedance; square-law rectification; system-level analysis; thermal noise; 1f noise; Detectors; Gunshot detection systems; Image analysis; Impedance; Power system modeling; Schottky diodes; Sensor arrays; Temperature; Thermal factors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272144
Filename :
1272144
Link To Document :
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