Title :
Heat flow in SOI current mirrors
Author :
Yu, Feixia ; Cheng, Ming -C
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
Abstract :
An analytical heat flow model, accounting for heat exchanges among devices via interconnect/poly lines and heat loss to oxide is developed and applied to study heat flow in SOI current mirror structures. An SOI nMOS current mirror illustrates the thermal coupling and heat flow through the interconnect. The interconnect provides an efficient heat loss medium for the SOI circuit.
Keywords :
MIS devices; current mirrors; heat losses; heat transfer; semiconductor device models; silicon-on-insulator; SOI circuit; SOI nMOS current mirror structures; heat exchanges; heat flow model; heat loss; interconnect lines; thermal coupling; Analytical models; Circuit simulation; Electronic packaging thermal management; Integrated circuit interconnections; MOS devices; Mirrors; Semiconductor films; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272150
