DocumentCode :
2617871
Title :
Simulation study of RF linearity in 50 nm DG and SOI MOSFETs
Author :
Kaya, S. ; Ma, W.
Author_Institution :
Ohio Univ., Athens, OH, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
394
Lastpage :
395
Abstract :
The influence of different physical mechanisms on linearity using 2D device simulation is analyzed. RF linearity of SOI and DG-MOSFETs at 50 nm gate length is investigated. ISE TCAD is employed to simulate terminal characteristics of generic bulk, SOI and DG-MOSFET structures. Impact ionization of channel carriers and SHE (self-heating effects) are also accounted for in the thin-body devices. DC transfer characteristics (ID-VG curves) are used to obtain transconductance gm and AC simulation is employed to capture bias dependence of output conductance gd.
Keywords :
MOSFET; impact ionisation; semiconductor device models; silicon-on-insulator; technology CAD (electronics); 2D device simulation; 50 nm; AC simulation; DC transfer characteristics; RF linearity; SOI MOSFETs; channel carriers; dual gate MOSFETs; impact ionization; self-heating effects; transconductance; Analytical models; Impact ionization; Linearity; MOSFETs; Physics; Power measurement; Power system reliability; Quantum mechanics; Radio frequency; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272151
Filename :
1272151
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2617871
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