• DocumentCode
    2617871
  • Title

    Simulation study of RF linearity in 50 nm DG and SOI MOSFETs

  • Author

    Kaya, S. ; Ma, W.

  • Author_Institution
    Ohio Univ., Athens, OH, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    394
  • Lastpage
    395
  • Abstract
    The influence of different physical mechanisms on linearity using 2D device simulation is analyzed. RF linearity of SOI and DG-MOSFETs at 50 nm gate length is investigated. ISE TCAD is employed to simulate terminal characteristics of generic bulk, SOI and DG-MOSFET structures. Impact ionization of channel carriers and SHE (self-heating effects) are also accounted for in the thin-body devices. DC transfer characteristics (ID-VG curves) are used to obtain transconductance gm and AC simulation is employed to capture bias dependence of output conductance gd.
  • Keywords
    MOSFET; impact ionisation; semiconductor device models; silicon-on-insulator; technology CAD (electronics); 2D device simulation; 50 nm; AC simulation; DC transfer characteristics; RF linearity; SOI MOSFETs; channel carriers; dual gate MOSFETs; impact ionization; self-heating effects; transconductance; Analytical models; Impact ionization; Linearity; MOSFETs; Physics; Power measurement; Power system reliability; Quantum mechanics; Radio frequency; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272151
  • Filename
    1272151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2617871