Low-disorder quantum wire with gate-tunable width and electron density

Author

Facer, G.R. ; Kane, B.E. ; Dzurak, A.S. ; Clark, R.G. ; Lumpkin, N.E. ; Pfeiffer, L.N. ; West, K.W.

Author_Institution

Semicond. Nanofabrication Facility, New South Wales Univ., Sydney, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

166

Lastpage

170

Abstract

We have fabricated quasi-one dimensional (1D) quantum wires based upon a novel GaAs/AlGaAs heterostructure in which carriers are induced by an epitaxially-grown n⁺-GaAs gate rather than by modulation doping, thus minimising disorder. By using side-gates to further constrain the electrons at the centre of the wires, we observe at low temperatures a quantisation of the resistance, indicative of ballistic transport through the constriction. Motivated by theoretical predictions concerning electron correlation effects in 1D, we report initial studies of the dependence of the observed conductance plateaux upon temperature and electron density

Keywords

III-V semiconductors; Luttinger liquid; aluminium compounds; electron correlations; electron density; gallium arsenide; interface states; semiconductor quantum wires; 1D; GaAs-AlGaAs; GaAs/AlGaAs heterostructure; ballistic transport; conductance plateaux; constriction; electron correlation effects; electron density; epitaxially-grown n⁺-GaAs gate; gate-tunable width; low temperatures; low-disorder quantum wire; quasi-one dimensional quantum wires; resistance quantisation; side-gates; temperature dependence; Australia; Ballistic transport; Electrons; Epitaxial layers; Gallium arsenide; Nanofabrication; Quasi-doping; Reservoirs; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610098

Filename

610098